In modern integrated circuit manufacturing, ion implantation is a very important technology, its basic principle is: use the energy of 100 kev magnitude of ion beam incident to the material, ion beam and the atoms or molecules of materials will occur a series of physical and chemical interaction, the incident ion energy loss gradually, and finally to stay in the material, and lead to change material surface composition, structure and performance, so as to optimize material surface properties, or to get some new excellent performance.

When the ion source is converted into plasma ion, a working temperature of more than 2000℃ will be generated. When the ion beam erupts, a large amount of ion kinetic energy will also be generated. Generally, metals will burn quickly, so inert metals with high mass density are needed to maintain the direction of ion beam eruption and increase the durability of components.Due to the advantages of stable high-temperature chemical properties, small thermal deformation and long service life of tungsten and molybdenum materials, the ion source parts and consumables of the ion injector in the semiconductor industry are mostly made of tungsten and molybdenum materials. These devices include the shielding tube of the emitting electron cathode, Arc chamber, the center fixed rod and filament clip etc .

Compared with the traditional tungsten-Molybdenum materials, the special process will be added to produce the tungsten-molybdenum materials for ion implantation to make them have higher density, finer grain, higher temperature resistance and better creep resistance.